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  this is information on a product in full production. march 2014 docid025853 rev 2 1/15 15 STGW40H120F2 trench gate field-stop igbt, h series 1200 v, 40 a high speed datasheet - production data figure 1. internal schematic diagram features ? maximum junction temperature: t j = 175 c ? high speed switching series ? minimized tail current ? v ce(sat) = 2.1 v (typ.) @ i c = 40 a ? 5 s minimum short circuit withstand time at t j =150 c ? tight parameters distribution ? safe paralleling ? low thermal resistance ? lead free package applications ? uninterruptible power supply ? welding machines ? photovoltaic inverters ? power factor correction ? high frequency converters description this device is an igbt developed using an advanced proprietary trench gate field-stop structure. the device is part of the improved h series of igbts, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high frequency converters. furthermore, a slightly positive v ce(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. to-247 1 2 3 c (2, tab) e (3) g (1) sc12850 table 1. device summary order codes marking package packaging STGW40H120F2 gw40h120f2 to-247 tube www.st.com
contents STGW40H120F2 2/15 docid025853 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
docid025853 rev 2 3/15 STGW40H120F2 electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 1200 v i c continuous collector current at t c = 25 c 80 a i c continuous collector current at t c = 100 c 40 a i cp (1) 1. pulse width limited by ma ximum junction temperature pulsed collector current 160 a v ge gate-emitter voltage 20 v p tot total dissipation at t c = 25 c 468 w t stg storage temperature range -55 to 150 c t j operating junction temperature -55 to 175 c table 3. thermal data symbol parameter value unit r thjc thermal resistance junction-case 0.32 c/w r thja thermal resistance junction-ambient 50 c/w
electrical characteristics STGW40H120F2 4/15 docid025853 rev 2 2 electrical characteristics t j = 25 c unless otherwise specified. table 4. static characteristics symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 2 ma 1200 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 40 a 2.1 2.6 v v ge = 15 v, i c = 40 a t j = 125 c 2.4 v ge = 15 v, i c = 40 a t j = 175 c 2.5 v ge(th) gate threshold voltage v ce = v ge , i c = 2 ma 5 6 7 v i ces collector cut-off current (v ge = 0) v ce = 1200 v 25 a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 250 na table 5. dynamic characteristics symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce = 25 v, f = 1 mhz, v ge = 0 -3200- pf c oes output capacitance - 202 - pf c res reverse transfer capacitance -88-pf q g total gate charge v cc = 520 v, i c = 40 a, v ge = 15 v, see figure 23 -187-nc q ge gate-emitter charge - 17 - nc q gc gate-collector charge - 115 - nc
docid025853 rev 2 5/15 STGW40H120F2 electrical characteristics table 6. igbt switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v ce = 600 v, i c = 40 a, r g = 10 , v ge = 15 v, see figure 22 -18-ns t r current rise time - 37 - ns (di/dt) on turn-on current slope - 1755 - a/s t d(off) turn-off delay time 152 - ns t f current fall time - 83 - ns e on (1) 1. energy losses include reverse recovery of the external diode. the diode is the same of the co-packed stgw40h120df2 turn-on switching losses - 1.0 - mj e off (2) 2. turn-off losses include also the tail of the collector current. turn-off switching losses - 1.32 - mj e ts total switching losses - 2.32 - mj t d(on) turn-on delay time v ce = 600 v, i c = 40 a, r g = 10 , v ge = 15 v, t j = 175 c, see figure 22 -36-ns t r current rise time - 20 - ns (di/dt) on turn-on current slope - 1580 - a/s t d(off) turn-off delay time - 161 - ns t f current fall time - 190 - ns e on (1) turn-on switching losses - 1.81 - mj e off (2) turn-off switching losses - 2.46 - mj e ts total switching losses - 4.27 - mj t sc short-circuit withstand time v ce = 600 v, v ge = 15 v, t j = 150 c, 5-j
electrical characteristics STGW40H120F2 6/15 docid025853 rev 2 2.1 electrical characteristics (curves) figure 2. power dissipation vs. case temperature figure 3. collector current vs. case temperature 3 wrw      7 & ?& :             9 *( ?97 - ?& ? *,3*)65 , &     7 & ?& $    9 *( ?97 - ??&       *,3*)65 figure 4. output characteristics (t j = 25c) figure 5. output characteristics (t j = 175c) , &     9 &( 9 $    9 *( 9  9 9 9 9      *,3*)65 , &    9 &( 9 $    9 *( 9  9 9 9 9      *,3*)65 figure 6. v ce(sat) vs. junction temperature figure 7. v ce(sat) vs. collector current 9 &( vdw      7 - ?& 9      9 *( 9 , & $ , & $ , & $  *,3*)65 9 &( vdw     , & $ 9         9 *( 9 7 - ?& 7 - ?& 7 - ?&    *,3*)65
docid025853 rev 2 7/15 STGW40H120F2 electrical characteristics figure 8. collector current vs. switching frequency figure 9. forward bias safe operating area       ,f>$@ i>n+]@ * ? uhfwdqjxodufxuuhqwvkdsh gxw\f\foh 9 && 95   9 *( 97 - ?& 7f   ? & 7f    ? &   *,3*)65 , &     9 &( 9 $  ?v ?v pv 6lqjohsxovh 7f ?&7 -  ?& 9 *( 9    ?v *,3*)65 figure 10. transfer characteristics figure 11. normalized v ge(th) vs junction temperature 7 - ?& 7 - ?&  9 *( 9   , &      $     9 &( 9 *,3*)65 9 *( wk     7 - ?& qrup     , & p$ 9 &( 9 *(    *,3*)65 figure 12. normalized v (br)ces vs. junction temperature figure 13. capacitance variation 9 %5 &(6     7 - ?& qrup     , & p$   *,3*)65 &  9 &( 9 s)    & lhv   & rhv & uhv  *,3*)65
electrical characteristics STGW40H120F2 8/15 docid025853 rev 2 figure 14. gate charge vs. gate-emitter voltage figure 15. switching loss vs collector current 9 *(   4 j q& 9  , & $ , *( p$ 9 && 9       *,3*)65 (  , & $ ?-      ( 21  9 &&  99 *(  9 5 *   7 -  ?& ( 2))   *,3*)65 figure 16. switching loss vs gate resistance figure 17. switching loss vs temperature (  5 *  ?-        ( 2)) 9 &&  99 *(  9 , &  $7 -  ?& ( 21     *,3*)65 (  7 - ?& ?-       ( 2)) 9 && 99 *( 9 5 *  , & $ ( 21      *,3*)65 figure 18. switching loss vs collector-emitter voltage figure 19. switching times vs. collector current (  9 &( 9 ?-      ( 2)) 7 - ?&9 *( 9 5 *  , & $   ( 21   *,3*)65 w , & $ qv      w i 7 - ?&9 *( 9 5 *  9 && 9 w grii   *,3*)65
docid025853 rev 2 9/15 STGW40H120F2 electrical characteristics figure 20. switching times vs. gate resistance w  5 *  qv    w i 7 - ?&9 *( 9 , & $9 && 9  w grii *,3*)65
electrical characteristics STGW40H120F2 10/15 docid025853 rev 2 figure 21. thermal impedance for igbt zthto2t_a 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k single pulse d=0.5 0.01 0.02 0.05 0.1 0.2
docid025853 rev 2 11/15 STGW40H120F2 test circuits 3 test circuits figure 22. test circuit for inductive load switching figure 23. gate charge test circuit figure 24. switching waveform am01504v1 am01505v1 am01506v1 90% 10% 90% 10% v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcross 90% 10%
package mechanical data STGW40H120F2 12/15 docid025853 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. figure 25. to-247 drawing 0075325_g
docid025853 rev 2 13/15 STGW40H120F2 package mechanical data table 7. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
revision history STGW40H120F2 14/15 docid025853 rev 2 5 revision history table 8. document revision history date revision changes 29-jan-2014 1 initial release. 14-mar-2014 2 updated table 4: static characteristics and table 5: dynamic characteristics . added section 2.1: electrical characteristics (curves) . updated title in cover page. minor text changes.
docid025853 rev 2 15/15 STGW40H120F2 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com


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